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Silicon Carbide MOSFET IMZA65R072M1H 650 V CoolSiC M1SiC Trench Power Device

ShenZhen Mingjiada Electronics Co.,Ltd.
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    Buy cheap Silicon Carbide MOSFET IMZA65R072M1H 650 V CoolSiC M1SiC Trench Power Device from wholesalers
     
    Buy cheap Silicon Carbide MOSFET IMZA65R072M1H 650 V CoolSiC M1SiC Trench Power Device from wholesalers
    • Buy cheap Silicon Carbide MOSFET IMZA65R072M1H 650 V CoolSiC M1SiC Trench Power Device from wholesalers

    Silicon Carbide MOSFET IMZA65R072M1H 650 V CoolSiC M1SiC Trench Power Device

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    Brand Name : Original Factory
    Model Number : IMZA65R072M1H
    Certification : Lead free / RoHS Compliant
    Price : Contact for Sample
    Payment Terms : T/T, L/C, Western Union
    Delivery Time : 5-8 work days
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    Silicon Carbide MOSFET IMZA65R072M1H 650 V CoolSiC M1SiC Trench Power Device

    Silicon Carbide MOSFET IMZA65R072M1H 650V CoolSiC M1SiC Trench Power Device


    Product Description Of IMZA65R072M1H

    IMZA65R072M1H CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The IMZA65R072M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.
    IMZA65R072M1H SiC MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.


    Specification Of IMZA65R072M1H

    Part NumberIMZA65R072M1HDrain to Source Voltage (Vdss)650 V
    Current - Continuous Drain (Id) @ 25°C28A (Tc)Transistor PolarityN-Channel
    Rds On - Drain-Source Resistance94 mOhmsQg - Gate Charge22 nC
    Power Dissipation (Max)96W (Tc)Operating Temperature-55°C ~ 150°C (TJ)

    Features Of IMZA65R072M1H

    • Optimizedswitchingbehaviorathighercurrents
    • CommutationrobustfastbodydiodewithlowQrr
    • Superiorgateoxidereliability
    • Bestthermalconductivityandbehavior
    • LowerRDS(on)andpulsecurrentdependencyontemperature
    • Increasedavalanchecapability
    • Compatiblewithstandarddrivers(recommendeddrivingvol age:18V)
    • Kelvinsourceprovidesupto4timeslowerswitchinglosses

    Benefits Of IMZA65R072M1H

    • High performance, high reliability and ease of use
    • Allows high system efficiency
    • Reduces system cost and complexity
    • Enables smaller system size
    • Works in topologies with continuous hard commutation
    • Fit for high temperature and harsh operations
    • Enables bi-directional topologies

    Potential Applications Of IMZA65R072M1H

    • Server
    • Telecom
    • SMPS
    • Solar energy systems
    • Energy storage and battery formation
    • UPS
    • EV charging
    • Motor drives

    Diagrams Of IMZA65R072M1H


    Package Outlines IMZA65R072M1H


    FAQ
    Q. Are your products original?
    A: Yes, all products are original, new original import is our purpose.
    Q:Which Certificates do you have?
    A:We are ISO 9001:2015 Certified Company and member of ERAI.
    Q:Can you support small quantity order or sample?Is the sample free?
    A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
    Q:How to ship my order? Is it safe?
    A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
    Q:What about the lead time?
    A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

    Quality Silicon Carbide MOSFET IMZA65R072M1H 650 V CoolSiC M1SiC Trench Power Device for sale
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